SI1302DL-T1-BE3

Mfr.Part #
SI1302DL-T1-BE3
Manufacturer
Vishay
Package/Case
-
Datasheet
Download
Description
MOSFET 30V N-CHANNEL TRENCH

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
640 mA
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOT-323-3
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
310 mW
Qg - Gate Charge :
1.4 nC
Rds On - Drain-Source Resistance :
480 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
SI1302DL-T1-BE3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
SI1302DL-T1-E3 Vishay / Siliconix 4,790 MOSFET 30V N-CH TRENCH
SI1302DL-T1-GE3 Vishay Semiconductors 2,670 MOSFET 30V Vds 20V Vgs SC70-3
SI1304DL-T1 VIS 8,100 SOT23
SI1308EDL-T1-BE3 Vishay / Siliconix 8,189 MOSFET 30V N-CHANNEL (D-S)
SI1308EDL-T1-GE3 Vishay Semiconductors 90,000 MOSFET 30V Vds 12V Vgs SC70-3
SI1317DL-T1-BE3 Vishay / Siliconix 17,397 MOSFET 20V P-CHANNEL (D-S)
SI1317DL-T1-GE3 Vishay Semiconductors 9,000 MOSFET -20V Vds 8V Vgs SC70-3
SI1330EDL-T1-BE3 Vishay / Siliconix 5,713 MOSFET N-CHANNEL 60-V (D-S)
SI1330EDL-T1-E3 Vishay Semiconductors 17,721 MOSFET 60V Vds 20V Vgs SC70-3
SI1330EDL-T1-GE3 Vishay Semiconductors 2,430 MOSFET 60V Vds 20V Vgs SC70-3